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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD312 DESCRIPTION With TO-3 package High DC current gain Excellent safe operating area Complement to type BD311 APPLICATIONS Designed for power amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage CHA IN Collector current Base current Junction temperature Storage temperature Emitter-base voltage GE S N Open collector EMIC DUC ON VALUE -60 TOR UNIT V V V A A A W ae ae -60 -5 -10 -20 -4 Collector current(peak) Total power dissipation TC=25ae 115 -65~200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.52 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-0.2A ; IB=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A IC=-5A ;VCE=-4V VCB=rated;IE=0 VEB=-7V; IC=0 IC=-5A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V,f=1MHz 25 5 MIN -60 TYP. BD312 SYMBOL VCEO(SUS) VCEsat VBEsat VBE ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V -1.0 -1.8 -1.5 -1.0 -1.0 V V V mA mA Transition frequency HAN INC SEM GE OND IC TOR UC 4 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD312 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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